Alpha and Omega Semiconductor Introduces 25V MOSFET in DFN3.3x3.3 Source-Down Packaging

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Alpha and Omega Semiconductor Limited (AOS), a designer, developer, and global supplier of a broad range of discrete power devices, wide band gap power devices, power management ICs, and modules, today introduced its AONK40202 25V MOSFET in state-of-the-art DFN3.3x3.3 Source-Down packaging technology. Designed for high power density in DC-DC applications, the AONK40202 provides features that meet the requirements of AI servers and data center power distribution. In particular, its Source-Down packaging technology offers a larger source contact to the PCB, and its center gate pin layout allows easier routing on the PCB, so the gate driver connection can be minimized.

Offering outstanding current handling capabilities, the AONK40402 MOSFET’s DFN3.3x3.3 Source-Down packaging technology with clip enables continuous current capabilities up to 319A with a maximum junction temperature rated at 175°C. This provides significant potential for system-level improvements, such as better thermal management, enabling higher power density and greater efficiency.

“AONK40202, which utilizes advanced DFN3.3x3.3 Source-Down technology, offers a reduction in power losses and delivers better thermal performance compared to traditional DFN3.3x3.3 Drain-Down packaging solutions. The AONK40202, with its lower on-state resistance (RDS(on)) and enhanced thermal performance, provides designers with the advanced technologies necessary to utilize PCB space more effectively. These features and many more in the AONK40202 are specifically designed to meet the increasing power density demands of AI servers,” said Peter H. Wilson, Sr. Director of MOSFET product line at AOS.