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Mycronic’s Global Technologies Makes Acquisition in France

03/13/2025 | Mycronic
Mycronic’s Global Technologies division has acquired Hprobe, a company headquartered in Grenoble, France, which has developed a unique technology for high-speed magnetic testing of Magnetoresistive Random Access Memories (MRAMs) and magnetic sensors.

Avalanche Technology, UMC Announce 22nm Production of High-Density MRAM-Based Devices

09/12/2022 | Business Wire
Avalanche Technology, the leader in next-generation MRAM technology, and United Microelectronics Corporation (UMC), a leading semiconductor foundry, announced the immediate availability of new High-Reliability Persistent SRAM (P-SRAM) memory devices through UMC’s 22nm process technology.

Energy-efficient Magnetic RAM: A New Building Block for Spintronic Technologies

12/17/2020 | POSTECH
Researchers at Pohang University of Science and Technology (POSTECH) and Seoul National University in South Korea have demonstrated a new way to enhance the energy efficiency of a non-volatile magnetic memory device called SOT-MRAM.

Researchers Develop 128Mb STT-MRAM

01/02/2019 | Tohoku University
A research team, led by Professor Tetsuo Endoh at Tohoku University, has successfully developed 128Mb-density STT-MRAM (spin-transfer torque magnetoresistive random access memory) with a write speed of 14 ns for use in embedded memory applications, such as cache in IOT and AI.

Dynamic Solution for Accurate Reading

03/20/2018 | A*STAR
A sensing scheme that responds dynamically to voltage fluctuations could improve accuracy when reading data from spin-based memory storage.
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