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Combining low switching losses, temperature-stable RDS(on) and the introduction of TOLL packaging for improved efficiency, power density and thermal performance in industrial and automotive applications.
Nexperia today announced a new family of 750 V silicon carbide (SiC) trench MOSFETs, combining low switching losses, temperature-stable RDS(on) characteristics and robust switching performance in a broad range of package options, including the introduction of TOLL packaging to Nexperia's SiC MOSFET portfolio. Designed for demanding industrial and automotive applications, the devices enable efficient, reliable and compact power conversion systems.
As demand for more efficient power conversion continues to grow across sectors such as renewable energy, industrial automation, AI datacentres and electrified transportation, designers must achieve higher levels of efficiency, power density, thermal performance and system cost. Addressing these requirements calls for power devices that deliver consistent, predictable performance across a wide range of operating conditions.
The new SiC MOSFET family is designed to help engineers address these challenges. Extending the company's portfolio into the 750 V voltage class, these devices are optimized for EV charging infrastructure, photovoltaic inverters, industrial drives, AI and high-performance computing power supplies, as well as onboard chargers, DC-DC converters and auxiliary drives applications. The additional voltage headroom supports robust operation under transient conditions while helping designers maximise overall system performance.
The devices combine low conduction and switching losses with excellent RDS(on) stability across their operating temperature range, helping to maintain predictable performance in real-world applications. Fast switching speeds, temperature-stable turn-off behaviour and a robust intrinsic body diode further support reliable operation in demanding hard-switching topologies. These characteristics can help reduce cooling requirements and support higher system efficiency, particularly under medium and high load conditions.
A key addition to Nexperia's SiC MOSFET portfolio is the availability of TOLL packages. As one of the most widely adopted surface-mount packages for high-power applications, TOLL combines a compact footprint with low package inductance, making it well suited to designs that require high power density and efficient high-frequency switching. The package complements Nexperia's existing through-hole, bottom-cooled and top-cooled options, giving designers greater choice when balancing thermal, layout and manufacturing requirements.
“The introduction of our 750 V SiC MOSFET family represents an important step in expanding Nexperia’s wide bandgap portfolio,” Gaetano Pignataro, Head of SiC & IGBT Product Group at Nexperia. “By combining low switching losses, temperature-stable performance and flexible packaging options, including TOLL, these devices help customers increase power density, improve efficiency and simplify thermal management in next-generation power conversion systems. We are committed to providing engineers with the technologies they need to meet the growing demands of electrification, renewable energy and AI-driven infrastructure.”
The 750 V family is available now in both industrial and AEC-Q101-qualified automotive variants, providing a scalable SiC technology platform for a wide range of power conversion applications. This enables customers to leverage the performance benefits of a common SiC technology across multiple system topologies while addressing diverse qualification requirements.
